BSS670S2LL6327 datasheet

Маркировка

BSS670S2LL6327
Производитель

Infineon Technologies
Описание

Infineon Technologies BSS670S2LL6327 Mfr Package Description: ROHS COMPLIANT, PLASTIC PACKAGE-3 Lead Free: Yes EU RoHS Compliant: Yes China RoHS Compliant: Yes Package Shape: RECTANGULAR Package Style: SMALL OUTLINE Surface Mount: Yes Terminal Form: GULL WING Terminal Finish: MATTE TIN Terminal Position: DUAL Number of Terminals: 3 Package Body Material: PLASTIC/EPOXY Configuration: SINGLE WITH BUILT-IN DIODE Number of Elements: 1 Transistor Application: SWITCHING Transistor Element Material: SILICON Power Dissipation Ambient-Max: 0.3600 W Channel Type: N-CHANNEL FET Technology: METAL-OXIDE SEMICONDUCTOR Operating Mode: ENHANCEMENT Transistor Type: GENERAL PURPOSE SMALL SIGNAL Drain Current-Max (ID): 0.5400 A Feedback Cap-Max (Crss): 10 pF DS Breakdown Voltage-Min: 55 V Drain-source On Resistance-Max: 0.8250 ohm
Количество страниц

8 шт.
Формат

PDF
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Размер файла

93,42 KB